d s g n-channel mosfet 3 absolute maximum ratings rating symbol value unit drain to source voltage v dss 55 v drain to current continuous tc = 25 : , v gs @10v continuous tc = 100 : , v gs @10v pulsed tc = 25 : , v gs @10v (note 1 ) i d i d i dm 5 0 35 160 a gate-to-source voltage continue v gs 20 v total power dissipation derating factor above 25 : p d . 94 0.63 w w/ : peak diode recovery dv/dt (note 3) dv/dt 5.0 v /ns operating junction and storage temperature range t j , t stg -55 to 175 : repetitive avalanche energy (note 1) e a r 9.4 mj maximum lead temperature for soldering purposes t l 300 : maximum package body for 10 seconds t pkg 260 : avalanche current (note 1) i a r 25 a thermal resistance symbol parameter min typ max units test conditions r jc junction-to-case 1. 5 : /w w ater cooled heatsink, p d adjusted for a peak junction temperature of +175 : r ja junction-to-ambient 62 : /w 1 cubic foot chamber, free air application features ? bu ck converter high side switch ? dc motor control , ups ...etc , & other application v dss r ds(on) max . i d 55 v 17 . 5 m
50 a ? ultra l ow on resistance ? low gate charge ? dynamic dv/dt rating ? i nductive switching curves ? peak current vs pulse width curve pin configuration symbol to-22 0 front view dimension in mm d s g d IRFZ44N 55a 50v n channel power mosfet
electrical characteristics unless otherwise specified, t j = 25 : . c IRFZ44N characteristic symbol min typ max units off characteristics drain-to-source breakdown voltage (v gs = 0 v, i d = 250 a) v dss 55 ... v breakdown voltage temperature coefficient (reference to 25 : , i d = 1m a) ? v dss / ? t j 0.0 58 . v/ : drain-to-source leakage current (v ds = 55 v, v gs = 0 v, t j = 25 : ) (v ds = 4 4 v, v gs = 0 v, t j = 150 : ) i dss 25 250 a gate-to-source forward leakage (v gs = 20 v) i gss 100 na gate-to-source reverse leakage (v gs = -20 v) i gss -100 na on characteristics gate threshold voltage (v ds = v gs , i d = 250 a) v gs(th) 2 .0 ... 4 .0 v static drain-to-source on-resistance (note 4) (v gs = 10 v, i d = 25 a) r ds(on) 17 .5 m
forward transconductance (v ds = 25 v, i d = 25 a) (note 4) g fs 19 s dynamic characteristics input capacitance c iss 14 7 0 pf output capacitance c oss 36 0 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 88 pf total gate charge q g . 63 . nc gate-to-source charge q gs 1 4 nc gate-to-drain (?miller?) charge (v ds = 44 v, i d = 25 a, v gs = 10 v) (note 2 ) q gd 23 nc resistive switching characteristics turn-on delay time t d(on) . 12 .. ns rise time t rise 6 0 ns turn-off delay time t d(off) ................. 44 ns fall time (v dd = 28 v, i d = 25 a, v gs = 10 v, r g = 1 2
) (note 4 ) t fall ................. 45 ns source-drain diode characteristics continuous source current (body diode) i s ............... 50 a pulse source current (body diode) (note 1) integral pn-diode in mosfet i sm ............... 160 a diode forward on-voltage (i s = 25 a, v gs = 0 v) (note 4) v sd ............... 1 . 3 v reverse recovery time t rr 63 ............... 95. ns reverse recovery charge (i f = 25 a, v gs = 0 v, d i /d t = 100a/s) (note 4) q rr 1 7 0 .............. 260 nc IRFZ44N 55a 50v n channel power mosfet
t p , rectangular pulse duration (s) t c , case temperature ( o c ) figure 3. maximum continuous drain current vs case temperature p d , power dissipation ( w ) t c , case temperature ( o c ) v ds , drain-to-source voltage ( v ) 40 i d , drain current (a) i d , drain current (a) r ds(on) , drain-to-source on resistance (m : v gs , gate-to-source voltage ( v ) figure 4. typical output characteristics figure 5. typical drain-to-source on resistance vs gate voltage and drain current 30 10 0 60 100 80 1.000 0.100 0.010 0 0 figure 2. maximum power dissipation vs case temperature 0 5 10 6 7 8 9 10 25 50 75 100 125 150 25 50 75 100 125 150 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 20 15 notes: duty factor: d=t1/t2 peak t j =p dm x z t jc x r t jc +t c 20% 10% 5 % 2% single pulse 1% p dm t 1 t 2 v g s = 1 0 v v gs = 6v pulse duration = 250 s duty cycle = 0.5% max t c = 25 o c figure 1. maximum effective thermal imped ance, junctio n-to-case v gs = 3.5v v gs = 4.5v v g s = 8 v v g s = 1 5 v v gs = 4v v g s =5 v 100 duty cycle 45 50 40 30 20 4 3 i d = 14a i d = 28a i d = 55 a 5 z t jc , thermal impedance pulse duration = 250 s duty cycle = 0.5% max t c = 25 o c 50% 0.001 120 200 35 25 40 20 40 180 160 140 80 60 20 175 120 140 175 70 60 50 irfz44 n 55 a 5 0v n channel power mosfet
figure 6. maximum peak current capability figure 10. typical drain-to-source on resistance figure 9. typical drain-to-source on resistance vs drain current t p , pulse width (s) i dm , peak current (a) 10000 100 1 v gs , gate-to-source voltage ( v ) i d , drain-to-source current (a) t av , time in avalanche (s) i as , avalanche current (a) 1000 100 10 1 i d , drain current (a) t j , junction temperature ( o c ) r ds(on) , drain-to-source resistance (normalized) 2.5 2.0 1.5 0.5 1.0. r ds(on) , drain-to-source on resistance (m : ) 15 10 5 0 figure 7. typical transfer characteristics figure 8. unclamped ind uctive switching capability 1e-6 1e-3 10e-3 100e-3 10e-6 100e-6 -75 -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 1.5 2.0 2.5 3.0 3.5 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1e+0 10e+0 transconductance may limit current in this region for temperatures above 25 o c derate peak current as follows: ii t c s drti s dt cc ds o c o c o c strti t o c strti t o c s s drti s dt cc s i d if r z 0: t av = (l/r) ln[(i as r)/(1.3bv dss -v dd )+1] if r= 0: t av = (li as )/(1.3bv dss -v dd ) r equals total series resistance of drain circuit s unction teerature s ir c r st
figure 11. typical breakdown voltage vs junction temperature figure 12. typical threshold voltage vs junction temperature figure 15. typical gate charge vs gate-to-source voltage figure 16. typical body diode transfer characteristics i sd , reverse drain current (a) v gs , gate-to-source voltage (v) c, capacitance (pf) i d , drain current (a) v gs(th) , threshold voltage (normalized) bv dss , drain-to-source breakdown voltage (normalized) t j , junction temperature ( o c) v ds , drain-to-source voltage (v) v ds , drain voltage (v) v sd , source-to-drain voltage (v) q g , total gate charge (nc) t j , junction temperature ( o c) 1.1 1.2 1.0 0.8 0.6 40 100 10 1 12 8 2 0 1.10 1.05 1.00 0.95 0.90 0.9 0.7 2000 0 -75 -50 -25 0.0 25 50 75 100 125 150 -75 -50 -25 50 100 75 125 150 25 0.0 1 10 100 0.01 0.1 1 10 100 0 0.3 0.5 0.7 0.9 1.1 1.3 20 40 30 10 4 6 10 v gs = 0v i d = 250 a v gs = v ds i d = 250 a t j = max rated, t c = 25 o c single pulse operation in this area may be limited by r ds(on) 10s 1 0 0 1 . 0 m 1 0 m s d c c oss c rss c iss v gs = 0v, f = 1mhz c iss = c gs + c gd c oss # c ds + c gd c rss = c gd i d = 59a 1 5 0 o c 2 5 o c figure 14. typical capacitance vs drain-to-source voltage 0.5 1000 80 60 20 0 2500 500 1000 1500 3000 v gs = 0v - 5 5 o c 100 1.20 1.15 175 175 v ds =45v v ds =30v v ds =15v 5152535 irfz44 n 55 a 5 0v n channel power mosfet
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